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Wednesday, November 11, 2020 | History

4 edition of Organometallic vapor phase epitaxy found in the catalog.

Organometallic vapor phase epitaxy

theory and practice

by G. B. Stringfellow

  • 228 Want to read
  • 0 Currently reading

Published by Academic Press in Boston .
Written in English

    Subjects:
  • Compound semiconductors.,
  • Metal organic chemical vapor deposition.

  • Edition Notes

    Includes bibliographies and index.

    StatementGerald B. Stringfellow.
    Classifications
    LC ClassificationsQC611.8.C64 S77 1989
    The Physical Object
    Paginationxviii, 398 p. :
    Number of Pages398
    ID Numbers
    Open LibraryOL2182640M
    ISBN 100126738408
    LC Control Number89000351


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Organometallic vapor phase epitaxy by G. B. Stringfellow Download PDF EPUB FB2

Organometallic Vapor-Phase Epitaxy describes the operation of a particular technique for the production of compound semiconductor materials. It describes how the technique works, how it can be used for the growth of particular materials and structures, and the application of these materials for specific devices.

Here is one of the first single-author treatments of organometallic vapor-phase epitaxy (OMVPE)--a leading technique for the fabrication of semiconductor materials and devices.

Also included are metal-organic molecular-beam epitaxy (MOMBE) and chemical-beam epitaxy (CBE) ultra-high-vacuum deposition techniques using organometallic source molecules. Organometallic Vapor-Phase Epitaxy: Theory and Practice by Gerald B. Stringfellow (Author) out of 5 stars 3 ratings.

ISBN ISBN Why is ISBN important. ISBN. This bar-code number lets you verify that you're getting exactly the right version or edition of a book. /5(3). Organometallic Vapor-Phase Epitaxy Review by Steven D.

on 29 Mar review stating Organometallic Vapor-Phase Epitaxy This book is the best educational source of the fundamentals of OMVPE also known as MOCVD growth of compound semiconductor materials.

Purchase Organometallic Vapor-Phase Epitaxy - 1st Edition. Print Book & E-Book. ISBNBook Edition: 1. This book, written by a true expert in the field of growing semiconductors, provides an up-to-date summary of the current state of understanding of the principles, the problems as well as the latest developments in organometallic vapor-phase epitaxy (OMVPE) this book should be exceedingly useful to anyone interested in OMVPE and is a welcome addition to the library/5(3).

Organometallic Vapor-Phase Epitaxy Organometallic vapor phase epitaxy book the operation of a particular technique for the production of compound semiconductor materials.

It describes how the technique works, how it can be used for the growth of particular materials and structures, and the application of these materials for specific devices. It contains not only a fundamental description of the operation of 5/5(2). Organometallic vapor phase epitaxy (OMVPE) has emerged in this past decade as a flexible and powerful epitaxial materials synthesis technology for a wide range of compound–semiconductor.

Notation for Organometallic Precursor Molecules xxiii 1 Overview of the OMVPE Process 1 Introduction 1 Comparison of Epitaxial Techniques 3 Liquid-Phase Epitaxy (LPE) 3 Vapor-Phase Epitaxy (VPE) 5 Molecular-Beam Epitaxy (MBE) 5 Organometallic Vapor-Phase Epitaxy (OMVPE) 6 Chemical-Beam Epitaxy (CBE) 8.

Organometallic Vapor-Phase Epitaxy describes the operation of a particular technique for the production of compound semiconductor materials. It describes how the technique works, how it can be used for the growth of particular materials and structures, and the application of these materials for specific devices.5/5(1).

Organometallic Vapor-Phase Epitaxy describes the operation of a particular technique for the production of compound semiconductor materials. It describes how the technique works, how it can be used for the growth of particular materials and structures, and the application of these materials for specific devices/5(3).

Organometallic Vapor-Phase Epitaxy: Theory and Practice by Stringfellow, Gerald B. and a great selection of related books, art and collectibles available now at In this chapter, the organometallic vapor phase epitaxy (OMVPE) of HgCdTe by the direct alloy growth process (DAG) is described.

The issues of uniformity, extrinsic doping, low temperature growth, choice of substrates and suitability of the materials for device applications are addressed. These results suggest that OMVPE will be a viable growth method for HgCdTe for future Author: Ishwara B. Bhat. Al x Ga y In 1-x-y P with x+y=, lattice matched to the GaAs substrate, has been grown by organometallic vapor phase epitaxy.

The simple, horizontal, IR heated system operates at. lic chemical vapor deposition (OMCVD), metalorganic vapor phase epitaxy (MOVPE), and organometallic vapor phase epitaxy (OMVPE).

Manasevit originally named the process MOCVD to emphasize the metal constituent and to avoid confusion with organometallic chemistry research, which generally places more interest in, and emphasis on.

G.B. Stringfellow: Organometallic Vapor Phase Epitaxy — Theory and Prac-tice (Academic Press, New York ), G.B. Stringfellow: Organometallic Vapor phase Epitaxy, 2nd ed.

(Academic Press, ) Google ScholarCited by: 1. Get this from a library. Organometallic vapor phase epitaxy: theory and practice.

[G B Stringfellow] -- Here is one of the first single-author treatments of organometallic vapor-phase epitaxy (OMVPE)--a leading technique for the fabrication of semiconductor materials and devices. Also included are.

Here is one of the first single-author treatments of organometallic vapor-phase epitaxy (OMVPE)—a leading technique for the fabrication of semiconductor materials and devices. Also included are metal-organic molecular-beam epitaxy (MOMBE) and chemical-beam epitaxy (CBE) ultra-high-vacuum deposition techniques using organometallic source.

We have grown by organometallic vapor phase epitaxy high-purity InP on Si substrates using a GaAs intermediate layer. The InP layers exhibit residual electron concentration as low as 5XIO14 cmT3 and electron mobilities as high as and 25 cm’!/V s at and 77 K, respectively.

Optoelectronic structure fabrication by organometallic vapor-phase epitaxy and selective epitaxy Citation. Tsai, Charles Su-Chang () Optoelectronic structure fabrication by organometallic vapor-phase epitaxy and selective epitaxy.

Dissertation (Ph.D.), California Institute of : Charles Su-Chang Tsai. ACCGE provides a forum for the presentation and discussion of recent research and development activities in all aspects of epitaxial thin film and bulk crystal growth; sessions will integrate fundamentals, modeling, experimental and industrial growth processes, characterization and applications.

Organometallic Vapor-Phase Epitaxy: Theory and Practice, Edition 2 - Ebook written by Gerald B. Stringfellow. Read this book using Google Play Books app on your PC, android, iOS devices.

Download for offline reading, highlight, bookmark or take notes while you read Organometallic Vapor-Phase Epitaxy: Theory and Practice, Edition 2.

HgTe and HgCdTe layers have been grown by organometallic vapor phase epitaxy at low temperature by using methylallyltelluride (MATe), dimethylcadmium (DMCd) and elemental mercury. Use of MATe enabled us to grow layers in the °C range, which is 50°C lower than the growth temperature when diisopropyltelluride (DIPTe) is : Ishwara B.

Bhat, Hassan Ehsani, Sorab K. Ghandhi. Conditions for growth of GaAsQ1−x Sb1−x layers with x as high as on GaAs substrates are described for temperatures between and °C. Effects of substrate orientation on growth characteristics are noted, and comparisons of growth on ()- and ()-GaAs faces are made.

The experimental results indicate growth is being controlled by surface Cited by: COUPON: Rent Organometallic Vapor-Phase Epitaxy Theory and Practice 2nd edition () and save up to 80% on textbook rentals and 90% on used textbooks.

Get FREE 7-day instant eTextbook access. This chapter gives some brief historical comments on metalorganic vapor phase epitaxy (MOVPE) and its development over its 50‐year history. Precursors provide the key to the success of MOVPE in providing a very‐high‐purity source of the components of the compound semiconductor in a convenient form that can be delivered at (or close to) room temperature in Author: S.J.C.

Irvine, P. Capper. “epitaxy” in the acronym. Two of the more common variants are organometallic vapor phase epitaxy (OMVPE)7 and metalorganic vapor phase epitaxy (MOVPE) 18 which are often used in the compound semiconductor epitaxy literature.

CVD has a number of advantages as a method for depositing thin films. One of the primary advantages is that CVD films are. Ga x In 1−x As lattice matched to the InP substrate (x=) has been grown by organometallic vapor phase epitaxy using trimethylindium (TMIn) and trimethylgallium (TMGa) as the group III sources and AsH 3 as the As source.

In a simple, horizontal, atmospheric pressure reactor, the GaInAs growth proceeds without visible evidence of parasitic prereaction by: Organometallic Vapor-Phase Epitaxy, Second Edition: Theory and Practice by Gerald B.

Stringfellow. Academic Press, Hardcover. Good. Organometallic Vapor Phase Epitaxy of ZnSe with Novel Zn and Se Sources by JEUNG-SOO HUH B.S. Metallurgy, Seoul National University () M.S.

Metallurgy, Seoul National University () Submitted to the Department of Materials Science and Engineering in Partial Fulfillment of the Requirements for the Degree of DOCTOR OF PHILOSOPHY at the. We report the epitaxial growth of single‐crystal stoichiometric ZnGeAs () ZnGeAs 2 layers were deposited by organometallic vapor‐phase epitaxy on () GaAs.

The epitaxy has specular surface morphology. The stoichiometric chemical composition has been confirmed by x‐ray diffraction, electron microprobe, and Auger electron spectroscopy. Selected‐area Cited by: Hydride vapour phase epitaxy (HVPE) is an epitaxial growth technique often employed to produce semiconductors such as GaN, GaAs, InP and their related compounds, in which hydrogen chloride is reacted at elevated temperature with the group-III metals to produce gaseous metal chlorides, which then react with ammonia to produce the group-III nitrides.

Carrier gasses. Organometallic Vapor Phase Epitaxy Theory And Practice Getting the books organometallic vapor phase epitaxy theory and practice now is not type of inspiring means. You could not without help going when ebook increase or library or borrowing from your contacts to door them.

This is an completely easy means to specifically get lead by on-line. Systematically discusses the growth method, material properties, and applications for key semiconductor materials MOVPE is a chemical vapor deposition technique that produces single or polycrystalline thin films.

As one of the key epitaxial growth technologies, it produces layers that form the basis of many optoelectronic components including mobile phone. Studies on the materials development of Ga{sub 1{minus}x}In{sub x}As{sub y}Sb{sub 1{minus}y} alloys for thermophotovoltaic (TPV) devices are reviewed.

Ga{sub 1{minus}x}In{sub x}As{sub y}Sb{sub 1{minus}y} epilayers were grown lattice matched to GaSb substrates by organometallic vapor phase epitaxy (OMVPE) using all organometallic precursors including triethylgallium, Cited by: The incorporation of Fe into InP grown by organometallic vapor-phase epitaxy using ferrocene as the dopant source has been studied.

Room temperature resistivity of the doped epitaxial layers varied from to 7×10 4 Ω cm. Photoluminescence measurements at 10 K indicated that the predominant deep radiative transition in the doped InP was at by: High-quality, ordered nanopores in semiconductors are attractive for numerous biological, electrical, and optical applications.

Here, GaN nanorods with continuous pores running axially through their centers were grown by organometallic vapor phase epitaxy. The porous nanorods nucleate on an underlying ()-oriented GaN film through openings in a SiNx template that Cited by: 6.

substrates using conventional organometallic vapor phase epitaxy at substrate temperatures of °C is reported. The epitaxial ZrN layer provides an integral back reflector and Ohmic contact to n-type GaN, whereas the AlN layer serves as a reaction barrier, as a thermally conductive interface layer, and as an electrical isolation.

@article{osti_, title = {Structural TEM study of nonpolar a-plane gallium nitride grown on(_0) 4H-SiC by organometallic vapor phase epitaxy}, author = {Zakharov, Dmitri N and Liliental-Weber, Zuzanna and Wagner, Brian and Reitmeier, Zachary J and Preble, Edward A and Davis, Robert F}, abstractNote = {Conventional and high resolution electron microscopy.

@article{osti_, title = {Organometallic Vapor Phase Epitaxy of n-GaSb and n-GaInAsSb for Low Resistance Ohmic Contacts}, author = {Wang, C A and Shiau, D A and Huang, R K and Harris, C T and Connors, M K}, abstractNote = {A comparison of n-GaSb and n-GaInAsSb epilayers for ohmic contacts in GaSb-based devices is studied.

The epilayers were. Progress in large area organometallic vapor phase epitaxy for III-V multijunction photovoltaics C. M. Fetzer*, X.Q. Liu, J. Chang, W. Hong, A. Palmer, D. Bhusari, B. Jun, M. Lau, and H.

Lee Boeing-Spectrolab, Sylmar, CA,USA. A R T I C L E I N F O deposit g Keywords: Germanium Multijunction solar cells Photovoltaics Metamorphic OMVPE.We report on the reduction of threading dislocations in GaN overlayers grown by organometallic vapor phase epitaxy on micro-porous TiN networks.

These networks were obtained by in situannealing of thin Ti layers deposited in a metalization chamber, on the () face of GaN templates. Observations by transmission electron microscopy indicate dislocation reduction by Cited by: A New Organometallic Vapor Phase Epitaxy Reactor for Highly Uniform Epitaxy C.A.

Wang. We have designed and built a new organometallic vapor phase epitaxy (OMVPE) reactor for the growth of thin films of compound semiconductors such as GaAs and AlGaAs.